Strained-Si single-gate versus unstrained-Si double-gate MOSFETs
نویسندگان
چکیده
منابع مشابه
Strained-Si single-gate versus unstrained-Si double-gate MOSFETs
Self-consistent full-band Monte Carlo simulations are employed to compare the performance of nanoscale strained-Si single-gate (SG) and unstrained-Si double-gate (DG) MOSFETs for a gate length of 25 nm. Almost the same on-current as in the DG-MOSFET can be achieved by strain in a SG-MOSFET for the same gate overdrive. This is due to the compensation of the higher electron sheet density in the t...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2004
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/19/4/043